Lopez, S. published the artcileSpray pyrolysis deposition of tin sulfide (SnxSy) thin films, Application of 1,1-Dimethylthiourea, the publication is Semiconductor Science and Technology (1994), 9(11), 2130-3, database is CAplus.
Tin sulfide (SnxSy) thin films have been prepared on Pyrex glass substrates by the spray pyrolysis technique using tin chloride (SnCl2) and N,N-dimethylthiourea (CH3NHCSNHCH3) as starting materials. The depositions were carried out in the range of substrate temperatures from 320 to 450¡ã. From x-ray diffraction measurements and SEM micrographs, it is found that the values of x and y, which determine the type of deposited compound, depend on the substrate temperature At lower substrate temperatures (320-360¡ã), mixed phases such as Sn2S3 and ¦Ã-Sn2S3 are present. At intermediate substrate temperatures (370-390¡ã), the SnS phase is predominant. For substrate temperatures higher than 390¡ã, the deposited material is mainly SnO2. The optical reflectance and transmittance of SnS were used in an iterative method to obtain the refractive index (n) and the excitation coefficient (k). The values of n and k were used to calculate the absorption coefficient (k). These values of n and k were used to calculate the absorption coefficient (¦Á) and the bandgap (EG), giving the result EG = 1.27 eV. Measurements of the dark conductance (¦Ò) as a function of T were made and an activation energy of 0.54 eV was determined from the slope of a plot of ln ¦Ò vs. 1/T.
Semiconductor Science and Technology published new progress about 6972-05-0. 6972-05-0 belongs to catalysis-chemistry, auxiliary class Thiourea,Amine,Aliphatic hydrocarbon chain,Amide, name is 1,1-Dimethylthiourea, and the molecular formula is C3H8N2S, Application of 1,1-Dimethylthiourea.
Referemce:
https://courses.lumenlearning.com/boundless-chemistry/chapter/catalysis/,
Catalysis – Wikipedia